Presentation Abstract

Session: Joint CLEO/QELS Poster Session II
Wednesday, May 19, 2010, 12:00 PM - 1:30 PM
Presentation Type: CLEO Contributed
Presentation: JWA94 - Optical Spectroscopy on Bi Containing Semiconductors
Pres. Time: Wednesday, May 19, 2010, 12:00 PM - 1:30 PM
Location: Exhibit Hall
Category: CLEO 06. Optical Materials, Fabrication and Characterization
Author(s): Alexey Chernikov1, Sangam Chatterjee1, Martin Koch1, Christina Bückers1, Stephan W. Koch1, Sebastian Imhof2, Angela Thränhardt2, Xianfeng Lu3, Shane R. Johnson3, Dan A. Beaton4, Thomas Tiedje4; 1Philipps-Univ. Marburg, Germany, 2Technische Univ. Chemnitz, Germany, 3Arizona State Univ., USA, 4Univ. of British Columbia, Canada.
Abstract: The novel semiconductor material Ga(AsBi) is investigated by the time-resolved photoluminescence as function of lattice temperature, excitation density, and excitation energy. Disorder and localization effects are found to strongly influence the spectra and the dynamics.


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